AP50P10D
-100V P-Channel Enhancement Mode MOSFET
Description
The AP50P10D uses advanced trench technology
and design to provide excellent RDS(ON) with low gat
e charge. It can be used in a wide variety of applications.
It is ESD protested.
General Features
VDS =-100V,ID =-50A
RDS(ON) <50m @ VGS=-10V (Typ:42m )
Super high dense cell design
Advanced trench process technology
Reliable and rugged
High density celldesign for ultra low on-resistance
Application
Power switch
DC/DC converters